Home / Single FETs, MOSFETs / TK10V60W,LVQ

TK10V60W,LVQ

Toshiba Semiconductor and Storage

Product No:

TK10V60W,LVQ

Manufacturer:

Toshiba Semiconductor and Storage

Package:

4-DFN-EP (8x8)

Batch:

Datasheet:

Description:

MOSFET N-CH 600V 9.7A 4DFN

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TK10V60W,LVQ, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TK10V60W,LVQ and the required quantity in your RFQ. IICSEMI provides the latest quote for TK10V60W,LVQ without requiring registration. Latest information on TK10V60W,LVQ: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TK10V60W,LVQ latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	380mOhm @ 4.9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 500µA
Supplier Device Package	4-DFN-EP (8x8)
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	88.3W (Tc)
Series	DTMOSIV
Package / Case	4-VSFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9.7A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TK10V60