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TK11P65W,RQ

Toshiba Semiconductor and Storage

Product No:

TK11P65W,RQ

Package:

DPAK

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 11.1A DPAK

Quantity:

Delivery:

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Payment:

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In Stock : 1995

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.8335

    $1.8335

  • 10

    $1.6454

    $16.454

  • 100

    $1.322305

    $132.2305

  • 500

    $1.086401

    $543.2005

  • 1000

    $0.900154

    $900.154

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 440mOhm @ 5.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 450µA
Supplier Device Package DPAK
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 100W (Tc)
Series DTMOSIV
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 11.1A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TK11P65

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