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TK11S10N1L,LQ

Toshiba Semiconductor and Storage

Product No:

TK11S10N1L,LQ

Package:

DPAK+

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 11A DPAK

Quantity:

Delivery:

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Payment:

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In Stock : 1975

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.8645

    $0.8645

  • 10

    $0.74575

    $7.4575

  • 100

    $0.515945

    $51.5945

  • 500

    $0.431129

    $215.5645

  • 1000

    $0.366909

    $366.909

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 28mOhm @ 5.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 100µA
Supplier Device Package DPAK+
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 65W (Tc)
Series U-MOSVIII-H
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TK11S10

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