Home / Single FETs, MOSFETs / TK155E65Z,S1X

TK155E65Z,S1X

Toshiba Semiconductor and Storage

Product No:

TK155E65Z,S1X

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220

Batch:

Datasheet:

Description:

650V DTMOS VI TO-220 155MOHM

Quantity:

Delivery:

Payment:

In Stock : 164

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.9735

$2.9735
10

$2.49755

$24.9755
100

$2.020745

$202.0745
500

$1.796184

$898.092
1000

$1.537984

$1537.984
2000

$1.44818

$2896.36
5000

$1.389375

$6946.875

Not the price you want? Send RFQ Now and we'll contact you ASAP.

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of TK155E65Z,S1X, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include TK155E65Z,S1X and the required quantity in the RFQ. GOOD can get the latest quotations of TK155E65Z,S1X without registration. TK155E65Z,S1X latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1635 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	155mOhm @ 9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 730µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	150W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube