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TK1R4S04PB,LXHQ

Toshiba Semiconductor and Storage

Product No:

TK1R4S04PB,LXHQ

Package:

DPAK+

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 40V 120A DPAK

Quantity:

Delivery:

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Payment:

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In Stock : 3048

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.786

    $1.786

  • 10

    $1.48105

    $14.8105

  • 100

    $1.17876

    $117.876

  • 500

    $0.997405

    $498.7025

  • 1000

    $0.846279

    $846.279

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.9mOhm @ 60A, 6V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 500µA
Supplier Device Package DPAK+
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 180W (Tc)
Series U-MOSIX-H
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number TK1R4S04

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