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TK20E60W,S1VX

Toshiba Semiconductor and Storage

Product No:

TK20E60W,S1VX

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 20A TO220

Quantity:

Delivery:

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Payment:

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In Stock : 40

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.9115

    $4.9115

  • 10

    $4.12205

    $41.2205

  • 100

    $3.33507

    $333.507

  • 500

    $2.964475

    $1482.2375

  • 1000

    $2.538324

    $2538.324

  • 2000

    $2.390105

    $4780.21

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 155mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.7V @ 1mA
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 165W (Tc)
Series DTMOSIV
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK20E60

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