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TK30A06N1,S4X

Toshiba Semiconductor and Storage

Product No:

TK30A06N1,S4X

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220SIS

Batch:

Datasheet:

Description:

MOSFET N-CH 60V 30A TO220SIS

Quantity:

Delivery:

Payment:

In Stock : 237

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.8455

$0.8455
10

$0.741

$7.41
100

$0.568005

$56.8005
500

$0.449046

$224.523
1000

$0.359233

$359.233
2000

$0.325565

$651.13
5000

$0.303107

$1515.535
10000

$0.291878

$2918.78

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1050 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	15mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 200µA
Supplier Device Package	TO-220SIS
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	25W (Tc)
Series	U-MOSVIII-H
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK30A06