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TK39J60W,S1VQ

Name: TK39J60W,S1VQ
Brand: Toshiba Semiconductor and Storage
SKU: 12835621
Rating: 5 (1 reviews)

Toshiba Semiconductor and Storage

Product No:

TK39J60W,S1VQ

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-3P(N)

Batch:

Datasheet:

Description:

MOSFET N-CH 600V 38.8A TO3P

Quantity:

Delivery:

Payment:

In Stock : 25

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$9.7945

$9.7945
10

$8.8502

$88.502
100

$7.32697

$732.697
500

$6.3802

$3190.1
1000

$5.556949

$5556.949

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4100 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	65mOhm @ 19.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 1.9mA
Supplier Device Package	TO-3P(N)
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	270W (Tc)
Series	DTMOSIV
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	38.8A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK39J60