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TK40A06N1,S4X

Toshiba Semiconductor and Storage

Product No:

TK40A06N1,S4X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 40A TO220SIS

Quantity:

Delivery:

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Payment:

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In Stock : 30

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.1305

    $1.1305

  • 10

    $1.00795

    $10.0795

  • 100

    $0.78565

    $78.565

  • 500

    $0.649002

    $324.501

  • 1000

    $0.512373

    $512.373

  • 2000

    $0.47822

    $956.44

  • 5000

    $0.4543

    $2271.5

  • 10000

    $0.437228

    $4372.28

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 10.4mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 300µA
Supplier Device Package TO-220SIS
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 30W (Tc)
Series U-MOSVIII-H
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK40A06

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