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TK40P03M1(T6RDS-Q)

Toshiba Semiconductor and Storage

Product No:

TK40P03M1(T6RDS-Q)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

DPAK

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Datasheet:

Description:

MOSFET N-CH 30V 40A DPAK

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Product Information

Parameter Info

User Guide

Operating Temperature	-
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	17.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10.8mOhm @ 20A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.3V @ 100µA
Supplier Device Package	DPAK
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	-
Series	U-MOSVI-H
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TK40P03