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TK5R1A08QM,S4X

Toshiba Semiconductor and Storage

Product No:

TK5R1A08QM,S4X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

UMOS10 TO-220SIS 80V 5.1MOHM

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 66

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.4535

    $1.4535

  • 10

    $1.1913

    $11.913

  • 100

    $0.926915

    $92.6915

  • 500

    $0.785631

    $392.8155

  • 1000

    $0.639986

    $639.986

  • 2000

    $0.602471

    $1204.942

  • 5000

    $0.573781

    $2868.905

  • 10000

    $0.547295

    $5472.95

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 5.1mOhm @ 35A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 700µA
Supplier Device Package TO-220SIS
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 45W (Tc)
Series U-MOSX-H
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tube

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