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TK60F10N1L,LXGQ

Toshiba Semiconductor and Storage

Product No:

TK60F10N1L,LXGQ

Package:

TO-220SM(W)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 60A TO220SM

Quantity:

Delivery:

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Payment:

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In Stock : 1750

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.1185

    $2.1185

  • 10

    $1.7632

    $17.632

  • 100

    $1.403245

    $140.3245

  • 500

    $1.187386

    $593.693

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4320 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.11mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 500µA
Supplier Device Package TO-220SM(W)
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 205W (Tc)
Series U-MOSVIII-H
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 60A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number TK60F10

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