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TK7P65W,RQ

Toshiba Semiconductor and Storage

Product No:

TK7P65W,RQ

Manufacturer:

Toshiba Semiconductor and Storage

Package:

DPAK

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Datasheet:

Description:

MOSFET N-CH 650V 6.8A DPAK

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	490 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	800mOhm @ 3.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 250µA
Supplier Device Package	DPAK
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	60W (Tc)
Series	DTMOSIV
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6.8A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TK7P65