Home / Single FETs, MOSFETs / TK8R2E06PL,S1X

TK8R2E06PL,S1X

Toshiba Semiconductor and Storage

Product No:

TK8R2E06PL,S1X

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220

Batch:

Datasheet:

Description:

PB-F POWER MOSFET TRANSISTOR TO-

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TK8R2E06PL,S1X, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TK8R2E06PL,S1X and the required quantity in your RFQ. IICSEMI provides the latest quote for TK8R2E06PL,S1X without requiring registration. Latest information on TK8R2E06PL,S1X: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TK8R2E06PL,S1X latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1990 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	8.2mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 300µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	81W (Tc)
Series	U-MOSIX-H
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube