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TP65H035G4WSQA

Transphorm

Product No:

TP65H035G4WSQA

Manufacturer:

Transphorm

Package:

TO-247-3

Batch:

-

Datasheet:

pdf.png

Description:

650 V 46.5 GAN FET

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 350

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $18.354

    $18.354

  • 10

    $16.1709

    $161.709

  • 100

    $13.98571

    $1398.571

  • 500

    $12.67452

    $6337.26

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 41mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.8V @ 1mA
Supplier Device Package TO-247-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 187W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-247-3
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 47.2A (Tc)
Mfr Transphorm
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube

Detail Info

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TP65H035G4WSQA Tags

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