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TP65H070G4LSG-TR

Transphorm

Product No:

TP65H070G4LSG-TR

Manufacturer:

Transphorm

Package:

2-PQFN (8x8)

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Datasheet:

Description:

GANFET N-CH 650V 29A QFN8X8

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Parameter Info

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	8.4 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	85mOhm @ 16A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.8V @ 700µA
Supplier Device Package	2-PQFN (8x8)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	96W (Tc)
Series	SuperGaN®
Package / Case	2-PowerTSFN
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Mfr	Transphorm
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)