Home / Single FETs, MOSFETs / TPC8110(TE12L,Q,M)

TPC8110(TE12L,Q,M)

Toshiba Semiconductor and Storage

Product No:

TPC8110(TE12L,Q,M)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

8-SOP (5.5x6.0)

Batch:

Datasheet:

Description:

MOSFET P-CH 40V 8A 8SOP

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TPC8110(TE12L,Q,M), please feel free to contact us. To facilitate the processing of your inquiry, kindly include TPC8110(TE12L,Q,M) and the required quantity in your RFQ. IICSEMI provides the latest quote for TPC8110(TE12L,Q,M) without requiring registration. Latest information on TPC8110(TE12L,Q,M): #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TPC8110(TE12L,Q,M) latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	25mOhm @ 4A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 1mA
Supplier Device Package	8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	1W (Ta)
Series	U-MOSIII
Package / Case	8-SOIC (0.173", 4.40mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPC8110