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TPC8213-H(TE12LQ,M

Toshiba Semiconductor and Storage

Product No:

TPC8213-H(TE12LQ,M

Package:

8-SOP (5.5x6.0)

Batch:

-

Datasheet:

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Description:

MOSFET 2N-CH 60V 5A SOP8

Quantity:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 625pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 50mOhm @ 2.5A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.3V @ 1mA
Supplier Device Package 8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss) 60V
Series -
Package / Case 8-SOIC (0.173", 4.40mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 450mW
Current - Continuous Drain (Id) @ 25°C 5A
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Base Product Number TPC8213

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