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TPCF8A01(TE85L)

Toshiba Semiconductor and Storage

Product No:

TPCF8A01(TE85L)

Package:

VS-8 (2.9x1.5)

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 20V 3A VS-8

Quantity:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature Schottky Diode (Isolated)
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 49mOhm @ 1.5A, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 1.2V @ 200µA
Supplier Device Package VS-8 (2.9x1.5)
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 330mW (Ta)
Series U-MOSIII
Package / Case 8-SMD, Flat Lead
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2V, 4.5V
Package Tape & Reel (TR)
Base Product Number TPCF8A01

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