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TPCF8B01(TE85L,F,M

Toshiba Semiconductor and Storage

Product No:

TPCF8B01(TE85L,F,M

Package:

VS-8 (2.9x1.5)

Batch:

-

Datasheet:

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Description:

MOSFET P-CH 20V 2.7A VS-8

Quantity:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature Schottky Diode (Isolated)
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 110mOhm @ 1.4A, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 1.2V @ 200µA
Supplier Device Package VS-8 (2.9x1.5)
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 330mW (Ta)
Series U-MOSIII
Package / Case 8-SMD, Flat Lead
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)
Base Product Number TPCF8B01

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