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TPH3208PD

Transphorm

Product No:

TPH3208PD

Manufacturer:

Transphorm

Package:

TO-220AB

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Datasheet:

Description:

GANFET N-CH 650V 20A TO220AB

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 8 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	130mOhm @ 13A, 8V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.6V @ 300µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	96W (Tc)
Series	-
Package / Case	TO-220-3
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Mfr	Transphorm
Vgs (Max)	±18V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube