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TPWR6003PL,L1Q

Toshiba Semiconductor and Storage

Product No:

TPWR6003PL,L1Q

Manufacturer:

Toshiba Semiconductor and Storage

Package:

8-DSOP Advance

Batch:

Datasheet:

Description:

MOSFET N-CH 30V 150A 8DSOP

Quantity:

Delivery:

Payment:

In Stock : 756

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.793

$2.793
10

$2.3484

$23.484
100

$1.89981

$189.981
500

$1.68872

$844.36
1000

$1.445966

$1445.966
2000

$1.36153

$2723.06

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Product Information

Parameter Info

User Guide

Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	10000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	0.6mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.1V @ 1mA
Supplier Device Package	8-DSOP Advance
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	960mW (Ta), 170W (Tc)
Series	U-MOSIX-H
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	150A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPWR6003