Home / Single FETs, MOSFETs / TW027N65C,S1F

TW027N65C,S1F

Toshiba Semiconductor and Storage

Product No:

TW027N65C,S1F

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-247

Batch:

Datasheet:

Description:

G3 650V SIC-MOSFET TO-247 27MOH

Quantity:

Delivery:

Payment:

In Stock : 12

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$20.7385

$20.7385
10

$18.43

$184.3
100

$16.1196

$1611.96
500

$13.755392

$6877.696

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TW027N65C,S1F, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TW027N65C,S1F and the required quantity in your RFQ. IICSEMI provides the latest quote for TW027N65C,S1F without requiring registration. Latest information on TW027N65C,S1F: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TW027N65C,S1F latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	37mOhm @ 29A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 3mA
Supplier Device Package	TO-247
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	156W (Tc)
Series	-
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube