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XPN6R706NC,L1XHQ

Toshiba Semiconductor and Storage

Product No:

XPN6R706NC,L1XHQ

Manufacturer:

Toshiba Semiconductor and Storage

Package:

8-TSON Advance-WF (3.1x3.1)

Batch:

Datasheet:

Description:

MOSFET N-CH 60V 40A 8TSON

Quantity:

Delivery:

Payment:

In Stock : 29385

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.3015

$1.3015
10

$1.0621

$10.621
100

$0.82612

$82.612
500

$0.700245

$350.1225
1000

$0.570418

$570.418
2000

$0.536988

$1073.976

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Product Information

Parameter Info

User Guide

Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6.7mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 300µA
Supplier Device Package	8-TSON Advance-WF (3.1x3.1)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	840mW (Ta), 100W (Tc)
Series	U-MOSVIII-H
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	XPN6R706