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XPW4R10ANB,L1XHQ

Toshiba Semiconductor and Storage

Product No:

XPW4R10ANB,L1XHQ

Manufacturer:

Toshiba Semiconductor and Storage

Package:

8-DSOP Advance

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 70A AEC-Q101

Quantity:

Delivery:

Payment:

In Stock : 16494

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.1185

$2.1185
10

$1.75845

$17.5845
100

$1.39954

$139.954
500

$1.184213

$592.1065
1000

$1.004786

$1004.786
2000

$0.95455

$1909.1

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C
FET Feature	Standard
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.1mOhm @ 35A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 1mA
Supplier Device Package	8-DSOP Advance
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	170W (Tc)
Series	Automotive, AEC-Q101
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	70A
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)