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XPW6R30ANB,L1XHQ

Toshiba Semiconductor and Storage

Product No:

XPW6R30ANB,L1XHQ

Manufacturer:

Toshiba Semiconductor and Storage

Package:

8-DSOP Advance

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 45A 8DSOP

Quantity:

Delivery:

Payment:

In Stock : 762

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.8145

$1.8145
10

$1.5048

$15.048
100

$1.197475

$119.7475
500

$1.013232

$506.616
1000

$0.859712

$859.712
2000

$0.816724

$1633.448

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Product Information

Parameter Info

User Guide

Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6.3mOhm @ 22.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 500µA
Supplier Device Package	8-DSOP Advance
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	960mW (Ta), 132W (Tc)
Series	U-MOSVIII-H
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	45A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	XPW6R30