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G16N03S

Goford Semiconductor

型号:

G16N03S

封装:

8-SOP

批次:

-

数据手册:

pdf.png

描述:

N30V, 16A,RD<10M@10V,VTH1.0V~2.5

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 4000

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.4655

    $0.4655

  • 10

    $0.3952

    $3.952

  • 100

    $0.274455

    $27.4455

  • 500

    $0.214263

    $107.1315

  • 1000

    $0.174154

    $174.154

  • 2000

    $0.155676

    $311.352

请发送询价,我们将立即回复。

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 16.6 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 10mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-SOP
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.5W (Tc)
Series G
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Package Tape & Reel (TR)

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