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G230P06T

Goford Semiconductor

型号:

G230P06T

封装:

TO-220

批次:

-

数据手册:

-

描述:

P-60V,-60A,RD(MAX)<20M@-10V,VTH-

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 13

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.9785

    $0.9785

  • 10

    $0.80275

    $8.0275

  • 100

    $0.624625

    $62.4625

  • 500

    $0.529454

    $264.727

  • 1000

    $0.4313

    $431.3

  • 2000

    $0.406011

    $812.022

  • 5000

    $0.386678

    $1933.39

  • 10000

    $0.368828

    $3688.28

请发送询价,我们将立即回复。

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 4499 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 20mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 115W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube

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