Goford Semiconductor
型号:
G250N03IE
封装:
SOT-23-6L
批次:
-
描述:
N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
购买数量:
递送:
付款:
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$0.342
$0.342
10
$0.23845
$2.3845
100
$0.120365
$12.0365
500
$0.098154
$49.077
1000
$0.072827
$72.827
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 573 pF @ 15 V |
Gate Charge (Qg) (Max) @ Vgs | 9.1 nC @ 4.5 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 25mOhm @ 4A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 1.3V @ 250µA |
Supplier Device Package | SOT-23-6L |
Drain to Source Voltage (Vdss) | 30 V |
Power Dissipation (Max) | 1.4W (Tc) |
Series | - |
Package / Case | SOT-23-6 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
Mfr | Goford Semiconductor |
Vgs (Max) | ±10V |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Package | Tape & Reel (TR) |