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G33N03D52

Goford Semiconductor

型号:

G33N03D52

品牌:

Goford Semiconductor

封装:

DFN5*6

批次:

数据手册:

描述:

N30V, 33A,RD<13M@10V,VTH1V~3V, D

购买数量:

递送:

付款:

库存 : 4980

最小起订量: 1 最小递增量: 1

数量

单价

总价

1

$0.627

$0.627
10

$0.5396

$5.396
100

$0.373445

$37.3445
500

$0.312075

$156.0375
1000

$0.265592

$265.592
2000

$0.23654

$473.08

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产品信息

参数信息

用户指南

Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	782 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	17.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	13mOhm @ 16A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	DFN5*6
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	29W (Tc)
Series	-
Package / Case	DFN5*6
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)