TNPF65R380S | Tenno Nano-Coated SiC MOSFET, Optimal Solution for Medium and Low-Power Power Supplies
2026-08-03 17:39:12 502
With the continuous popularization of domestic silicon carbide applications, the market demand for high-stability and cost-effective SiC devices in medium and low-power energy storage equipment, industrial power supplies and high-frequency welding machines is growing rapidly. As a best-selling product of Tenno Semiconductor, the TNPF65R380S 650V SiC MOSFET has been widely recognized by mass-production customers relying on unique nano-coating technology.
Featuring a withstand voltage of 650V and optimized device capacitance parameters, TNPF65R380S operates stably in both hard and soft switching scenarios. Equipped with nano-coating process, it greatly enhances the anti-interference ability, reduces the failure risk under high-frequency operation, and delivers outstanding long-term continuous operation reliability. Compared with similar devices, it balances performance and cost perfectly, making it ideal for large-scale mass production projects.
It is widely applicable to medium and low-power energy storage converters, micro photovoltaic inverters, industrial switching power supplies, high-power LED drivers, high-frequency welding power supplies and other equipment. It effectively improves the overall efficiency of the equipment while controlling material costs, serving as an optimal choice for manufacturers pursuing cost performance.
This model adopts the mainstream TO-247 package with low replacement threshold, which can steadily replace overseas equivalent silicon carbide products. Tenno Semiconductor has a complete quality control system and stable bulk supply capacity, effectively relieving the pressure on the chip supply chain.
At present, sample application and joint solution debugging of TNPF65R380S are available. If you are developing medium and low-power power electronic equipment, you can test this nano-coated SiC MOSFET from Tenno to achieve the best balance between performance and cost.
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