Silicon Carbide in SOT‑89! 900 mΩ Rds(on) Brings Efficiency Boost for Medium‑Low‑Power Power Supplies
2026-09-14 17:45:40 1463
For medium‑low‑voltage high‑power supply designs such as PD fast chargers, LED drivers, PC adapters and air‑conditioner auxiliary power supplies, designers expect both low switching losses and high‑temperature reliability brought by Silicon Carbide (SiC), together with compact package size for PCB layout, thermal performance and cost control. Conventional large‑package SiC devices often struggle to balance these requirements.
TNT65R900S is an 800 V SiC MOSFET in SOT89‑3 surface‑mount package with typical 900 mΩ on‑resistance. It condenses SiC advantages into the widely‑used SOT‑89 medium‑power package and delivers a brand‑new component option for medium‑low‑power high‑voltage power supplies.
✨ Key Advantages
✅ Mature SOT89‑3 SMD Package
Comes with thermal pad for improved heat dissipation compared to SOT‑23. Proven SMT production process, no special PCB pad modification required. It can directly replace traditional super‑junction MOSFETs to reduce redesign cost and manufacturing risks.
✅ 800 V Rating, Typical Rds(on):900 mΩ
Rds(on)=900 mΩ at VGS=15 V; down to 700 mΩ when driven at 18 V. Maximum operating junction temperature reaches 175 °C, maintaining stable conduction under high‑temperature conditions. Ideal for enclosed adapters, LED drivers and equipment with limited cooling conditions.
✅ Native SiC High‑Speed Switching with Lower Losses
Fast switching performance with total switching energy of only 8 μJ, much lower switching loss than comparable silicon super‑junction MOSFETs. Integrated high‑performance body diode with Qrr=35 nC and short reverse‑recovery time. No external free‑wheeling diode is required for hard‑commutation conditions, simplifying peripheral circuitry.
✅ Gate‑Friendly Drive with Sufficient Margin
Recommended static gate drive: 0~+18 V; max recommended: −5~+20 V; transient withstand: −8~+26 V. Compatible with mainstream power IC SiC drive outputs. Typical threshold voltage VGS(th)=3.6 V with strong immunity against false turn‑on for enhanced system stability.
???? Typical Applications
▪ PD fast chargers, laptop PC adapters
▪ LED constant‑current driver power supplies
▪ Air‑conditioner auxiliary power, medium‑low‑power AC‑DC power supplies
▪ High‑voltage flyback solutions pursuing high efficiency and compact footprint
Many medium‑low‑power designs are capable of high efficiency, yet lack a properly‑sized, process‑compatible, well‑performing SiC device. TNT65R900S SOT89‑3 900 mΩ SiC‑MOS enables medium‑low‑power systems to benefit from SiC efficiency gains, improving temperature rise, EMI and overall system efficiency.
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