In medium‑low‑power power‑supply solutions such as PD chargers, LED drivers, PC adapters and household air‑conditioner power supplies, the conduction loss, switching speed and heat‑dissipation capability of components directly determine the overall energy efficiency and long‑term operational reliability. As a 650V‑class SiC MOSFET in TO‑252 package, TND65R480S is specially designed for consumer and home‑appliance power‑supply applications.

This device features 650 V blocking voltage and typical on‑resistance of 480 mΩ with excellent conduction performance. Its maximum operating junction temperature reaches 175 °C, suitable for continuous high‑temperature operation of power‑supply equipment. Benefiting from silicon‑carbide material advantages, it delivers high‑speed switching performance with much lower switching loss than conventional silicon MOSFETs. The integrated high‑performance body diode provides excellent reverse‑recovery characteristics, eliminating the need for an external freewheeling diode, simplifying the BOM and reducing solution costs.

The surface‑mount TO‑252 package supports automated SMT manufacturing. It exhibits low junction‑to‑case thermal resistance and outstanding thermal conductivity, effectively restraining temperature rise, shrinking heat‑sink size and enabling power‑supply miniaturization. The gate‑source voltage rating of ‑10 V ~ +22 V is compatible with most commercial power‑supply driver ICs. For engineers performing domestic‑component replacement or new‑project development, major circuit modifications are unnecessary, shortening debugging cycles.

Against continuously upgrading energy‑efficiency standards, TND65R480S is a high‑quality SiC device balancing performance, reliability and cost for fast‑charging, LED‑driver and home‑appliance switching‑power‑supply applications.