If you pursue SiC benefits of fast switching and low EMI with moderate current requirements and further‑optimized BOM cost, TND65R380S 650 V SiC MOSFET in TO‑252 SMD package is your cost‑competitive high‑voltage power‑switch option. It is widely applied in PFC correction, switching power supplies, power inverters and high‑voltage converters.

Rated blocking voltage 650 V, continuous drain current 11 A at 25 °C, maximum Rds(on) 440 mΩ. NMC nano‑coating optimizes thermal performance and lowers operating junction temperature; RthJC equals 2.88 °C/W. Operating junction temperature ranges from ‑55 °C to 175 °C for stable wide‑temperature‑range operation.

Low device capacitances enable fast switching and excellent EMI immunity to ease power‑supply EMI debugging. Simple gate drive and parallel‑connection support allow power scaling. Integrated SiC body diode brings low reverse‑recovery losses and can replace some external freewheeling diodes. TO‑252 SMD package facilitates SMT mass soldering. Compared with silicon MOSFETs, it substantially reduces switching losses, supports higher switching frequencies, shrinks magnetic components and heat‑sink size, and improves overall efficiency and power density.

RoHS‑compliant. Targeting medium‑and‑low‑power scenarios such as industrial power supplies, adapters and micro‑inverters, TND65R380S delivers a cost‑friendly component solution leveraging core SiC advantages.