Many power‑supply projects require the high‑speed switching and low‑EMI benefits of SiC without ultra‑low on‑resistance, seeking a sweet spot between performance and cost. TND65R260S is designed for this purpose. This 650 V SiC MOSFET in TO‑252 package targets PFC modules, switching power supplies, power inverters and high‑voltage converters.

It features 650 V blocking voltage and 15 A continuous drain current at 25 °C. Typical Rds(on) reaches 180 mΩ at VGS=18 V and 260 mΩ under 15 V drive, flexibly supporting two common gate‑drive voltages of 15 V / 18 V. NMC nano‑coating optimizes thermal performance and lowers junction temperature with RthJC = 2.88 °C/W, maximum junction temperature up to 175 °C.

Low parasitic capacitances enable fast switching and strong EMI suppression to simplify system‑level EMC tuning. The device is easy to drive and supports parallel operation for power expansion. Its integrated SiC body diode delivers excellent reverse‑recovery performance and reduces freewheeling losses. Compared with conventional silicon MOSFETs, it cuts switching losses significantly, permits higher operating frequencies, shrinks transformers and inductors, improves power density and relaxes heat‑sink requirements.

RoHS‑compliant TO‑252 SMD package ensures convenient soldering for mass industrial manufacturing. TND65R260S delivers a cost‑effective SiC solution for medium‑and‑low‑power SMPS, energy‑storage converters and industrial power supplies.