In the development of switching power supplies, PFC power correction, high‑voltage converters and small‑size inverters, the conduction loss, switching speed and thermal performance of components directly determine overall system efficiency and power density. TIONER Semiconductor’s TND65R180S is a 650 V SiC MOSFET in TO‑252 (DPAK) SMD package, delivering an excellent solution for medium‑and‑low‑power high‑voltage power supplies.

This device features a low on‑resistance of 165 mΩ, continuous drain current up to 20 A at 25 °C and 650 V blocking voltage, balancing high withstand‑voltage and low conduction loss. Built‑in NMC nano‑coating technology effectively lowers junction temperature Tj and thermal resistance. It provides superior EMI immunity with low input‑output capacitance for high‑speed switching, well‑suited for higher operating frequencies.

The TO‑252 surface‑mount package allows direct PCB mounting and supports parallel connection for power scaling with simple‑to‑drive gate characteristics. Its junction temperature ranges from ‑55 °C to 175 °C with RthJC as low as 2.88 °C/W, greatly easing thermal stress. It enables smaller heat sinks, higher system power density and reduced BOM cost. The integrated high‑performance SiC body diode features short reverse‑recovery time and low commutation loss. It fits applications including PFC modules, SMPS, energy‑storage micro‑inverters and high‑voltage converters, and complies with RoHS requirements.

Choose TND65R180S and leverage SiC advantages to design power supplies with higher efficiency, compact size and improved EMI performance.