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630AT

Goford Semiconductor

Product No:

630AT

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

Datasheet:

Description:

N200V,RD(MAX)<250M@10V,RD(MAX)<3

Quantity:

Delivery:

Payment:

In Stock : 63

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.8265

$0.8265
10

$0.71725

$7.1725
100

$0.496565

$49.6565
500

$0.414884

$207.442
1000

$0.353096

$353.096
2000

$0.314478

$628.956
5000

$0.29792

$1489.6
10000

$0.275861

$2758.61

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	509 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	11.8 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	250mOhm @ 1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	83W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube