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G110N06T

Goford Semiconductor

Product No:

G110N06T

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

Datasheet:

Description:

N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.

Quantity:

Delivery:

Payment:

In Stock : 96

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.52

$1.52
10

$1.24355

$12.4355
100

$0.967195

$96.7195
500

$0.819793

$409.8965
1000

$0.667812

$667.812
2000

$0.628662

$1257.324
5000

$0.598728

$2993.64
10000

$0.571092

$5710.92

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5538 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	113 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	6.4mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	120W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube