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G12P10TE

Goford Semiconductor

Product No:

G12P10TE

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

Datasheet:

Description:

P-100V,-12A,RD(MAX)<200M@-10V,VT

Quantity:

Delivery:

Payment:

In Stock : 75

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.722

$0.722
10

$0.6232

$6.232
100

$0.431775

$43.1775
500

$0.360772

$180.386
1000

$0.30704

$307.04
2000

$0.273458

$546.916
5000

$0.259065

$1295.325
10000

$0.239875

$2398.75

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	200mOhm @ 6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	40W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube