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25P06

Goford Semiconductor

Product No:

25P06

Manufacturer:

Goford Semiconductor

Package:

TO-252

Batch:

Datasheet:

Description:

P60V,RD(MAX)<45M@-10V,VTH2V~3V T

Quantity:

Delivery:

Payment:

In Stock : 4417

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.7885

$0.7885
10

$0.6479

$6.479
100

$0.50369

$50.369
500

$0.426968

$213.484
1000

$0.347814

$347.814

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	3384 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	45mOhm @ 12A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-252
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	100W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)