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G01N20LE

Goford Semiconductor

Product No:

G01N20LE

Manufacturer:

Goford Semiconductor

Package:

SOT-23-3

Batch:

Datasheet:

Description:

N200V,RD(MAX)<850M@10V,RD(MAX)<9

Quantity:

Delivery:

Payment:

In Stock : 2337

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.3895

$0.3895
10

$0.3021

$3.021
100

$0.181355

$18.1355
500

$0.167922

$83.961
1000

$0.11418

$114.18

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	850mOhm @ 1.7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	SOT-23-3
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	1.5W (Tc)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)