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G04P10HE

Goford Semiconductor

Product No:

G04P10HE

Manufacturer:

Goford Semiconductor

Package:

SOT-223

Batch:

Datasheet:

Description:

P-100V,-4A,RD(MAX)<200M@-10V,VTH

Quantity:

Delivery:

Payment:

In Stock : 4979

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.5035

$0.5035
10

$0.43035

$4.3035
100

$0.299345

$29.9345
500

$0.233738

$116.869
1000

$0.189981

$189.981

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1647 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	200mOhm @ 6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 250µA
Supplier Device Package	SOT-223
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1.2W (Tc)
Series	G
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)