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G075N06MI

Goford Semiconductor

Product No:

G075N06MI

Manufacturer:

Goford Semiconductor

Package:

TO-263

Batch:

-

Datasheet:

-

Description:

N60V, 110A,RD<7M@10V,VTH1.0V~4.0

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 757

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.33

    $1.33

  • 10

    $1.08775

    $10.8775

  • 100

    $0.84626

    $84.626

  • 500

    $0.717326

    $358.663

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 6443 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-263
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 160W (Tc)
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)

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