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G08P06D3

Goford Semiconductor

Product No:

G08P06D3

Manufacturer:

Goford Semiconductor

Package:

8-DFN (3.15x3.05)

Batch:

Datasheet:

Description:

P60V,RD(MAX)<52M@-10V,VTH-2V~-3.

Quantity:

Delivery:

Payment:

In Stock : 857

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.608

$0.608
10

$0.5301

$5.301
100

$0.366985

$36.6985
500

$0.30666

$153.33
1000

$0.260984

$260.984
2000

$0.232436

$464.872

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2972 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	52mOhm @ 6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 250µA
Supplier Device Package	8-DFN (3.15x3.05)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	40W (Tc)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)