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G1003A

Goford Semiconductor

Product No:

G1003A

Manufacturer:

Goford Semiconductor

Package:

SOT-23-3

Batch:

-

Datasheet:

-

Description:

N100V,RD(MAX)<210M@10V,RD(MAX)<2

Quantity:

Delivery:

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Payment:

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In Stock : 2262

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.4085

    $0.4085

  • 10

    $0.3135

    $3.135

  • 100

    $0.188195

    $18.8195

  • 500

    $0.174268

    $87.134

  • 1000

    $0.118503

    $118.503

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 622 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 18.2 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 210mOhm @ 3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package SOT-23-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 5W (Tc)
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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