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G1003B

Goford Semiconductor

Product No:

G1003B

Manufacturer:

Goford Semiconductor

Package:

SOT-23-3L

Batch:

-

Datasheet:

-

Description:

N100V,RD(MAX)<170M@10V,RD(MAX)<1

Quantity:

Delivery:

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Payment:

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In Stock : 10005

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.3515

    $0.3515

  • 10

    $0.2717

    $2.717

  • 100

    $0.16321

    $16.321

  • 500

    $0.151126

    $75.563

  • 1000

    $0.102762

    $102.762

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 130mOhm @ 1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package SOT-23-3L
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 3.3W
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3A
Mfr Goford Semiconductor
Vgs (Max) ±20V
Package Tape & Reel (TR)

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