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G100N03D5

Goford Semiconductor

Product No:

G100N03D5

Manufacturer:

Goford Semiconductor

Package:

8-DFN (4.9x5.75)

Batch:

Datasheet:

Description:

N-CH, 30V, 100A, RD(MAX)<3.5M@10

Quantity:

Delivery:

Payment:

In Stock : 4895

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.2065

$1.2065
10

$0.9842

$9.842
100

$0.7657

$76.57
500

$0.649002

$324.501
1000

$0.528684

$528.684
2000

$0.497696

$995.392

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5595 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.5mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-DFN (4.9x5.75)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	50W (Tc)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)