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G11S

Goford Semiconductor

Product No:

G11S

Manufacturer:

Goford Semiconductor

Package:

8-SOP

Batch:

Datasheet:

Description:

P-20V,RD(MAX)<18.4M@-4.5V,RD(MAX

Quantity:

Delivery:

Payment:

In Stock : 1730

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.3895

$0.3895
10

$0.33345

$3.3345
100

$0.23199

$23.199
500

$0.181146

$90.573
1000

$0.147231

$147.231
2000

$0.131622

$263.244

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2455 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	18.4mOhm @ 1A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.1V @ 250µA
Supplier Device Package	8-SOP
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	3.3W (Tc)
Series	G
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)