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G12P03D3

Goford Semiconductor

Product No:

G12P03D3

Manufacturer:

Goford Semiconductor

Package:

8-DFN (3.15x3.05)

Batch:

-

Datasheet:

pdf.png

Description:

P30V,RD(MAX)<20M@-10V,RD(MAX)<26

Quantity:

Delivery:

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Payment:

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In Stock : 7557

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.57

    $0.57

  • 10

    $0.4883

    $4.883

  • 100

    $0.339245

    $33.9245

  • 500

    $0.264898

    $132.449

  • 1000

    $0.215308

    $215.308

  • 2000

    $0.19248

    $384.96

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for G12P03D3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include G12P03D3 and the required quantity in your RFQ. IICSEMI provides the latest quote for G12P03D3 without requiring registration. Latest information on G12P03D3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs G12P03D3 latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 1253 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 24.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 20mOhm @ 6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package 8-DFN (3.15x3.05)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3W (Tc)
Series -
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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