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G12P04K

Goford Semiconductor

Product No:

G12P04K

Manufacturer:

Goford Semiconductor

Package:

TO-252

Batch:

-

Datasheet:

-

Description:

P40V,RD(MAX)<35M@-10V,RD(MAX)<45

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 4387

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.5035

    $0.5035

  • 10

    $0.43035

    $4.3035

  • 100

    $0.299345

    $29.9345

  • 500

    $0.233738

    $116.869

  • 1000

    $0.189981

    $189.981

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 35mOhm @ 6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 50W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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